PART |
Description |
Maker |
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Lite-On Technology, Corp.
|
MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
5202CS12Z 5202CS21 |
5 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN TEMIC SEMICONDUCTORS
|
TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN TEMIC SEMICONDUCTORS
|
QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|